HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG High Frequency Products Marketing Postal Address: P.O.Box 80 09 49 D - 81609 Munich Germany Phone: Fax: e-mail: www-page: (..89) 234 - 24480 (..89) 234 - 25568 martin.wimmers@infineon.com http://www.infineon.com/Discretes-RF Infineon Technologies AG 1 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 0 TABLE OF CONTENTS Titel 0. Table of Contents 2 1. Preliminary remarks 3 2. 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 3 3 4 4 3. 3.1 3.2 3.3 Quality Specifications of HiRel Components Overview on Available HiRel Quality Levels Wafer Release HiRel Quality Levels Professional Quality Level High Rel Quality Level Space Quality Level ESA Space Quality Level 6 6 7 8 8 9 10 11 4. Selection Guides of HiRel Discrete Microwave Semiconductors 12 4.1 HiRel Silicon Diodes General Purpose Silicon Schottky Diodes Silicon PIN Diodes for HiRel Applications 12 12 12 4.2 Component Types Package Types HiRel Silicon Bipolar Transistors Conventional Silicon Bipolar Microwave Transistors SIEGET Silicon Bipolar Microwave Transistors Page BAS40, 70 BXY42, 43, 44 13 BFY180, 280, 181, 183, BFY193, 196 BFY405, 420, 450 13 13 4.3 HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs CFY25, 27 Low Noise GaAs Microwave K-Band HEMTs CFY 67 Power GaAs Microwave C-Band MESFETs CLY29, 32, 35, 38 Power GaAs Microwave X-Band MESFETs CLX27, 30, 32, 34 General Puprose GaAs MMIC L- and S- Band CGY41 14 14 14 15 15 16 5. Package Outlines 17 5.1 Package Outlines of Diode Packages FP, HPAC140 P1, T T1, T2 17 18 19 5.2 Package Outlines of Transistor Packages Micro-X, Micro-X1, MWP-25 MWP-35 Package 20 20 21 Infineon Technologies AG 2 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 1 PRELIMINARY REMARKS This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Data sheets are available from our WWW-Pages, together with more specific informations: - Discrete and RF-Semiconductors (Small Signal Semiconductors): - HiRel Discrete and Microwave Semiconductors: http://www.infineon.com/ Discretes-RF For detailed descriptions, screening procedures and quality specifications as well as available Infineon Technologies or ESA/SCC Detail Specifications please contact also our Marketing Division (contact address as given on the Cover Page) HiRel components are mainly provided for highly professional application like radio links, military applications, sea cables, naval, air and space-borne systems. The philosophy concentrates on devices of highest reliability assembled in hermetically sealed packages. Screening procedures and quality assurance tests form a dominant part of the procurement procedures. Ordered quantities are very often for a single project or application only and thus comparatively low. 2 INTRODUCTION TO HiRel AND SPACE QUALIFIED DEVICES 2.1 GENERAL Infineon Technologies Small Signal Semiconductors is an important supplier of discrete semiconductor devices for the microwave community. The device families include Silicon and GaAs electronic devices. In Silicon, microwave diodes (PIN and Schottky) and bipolar transistors are available. In GaAs, low noise HEMTs and low noise as well as power MESFETs and corresponding monolithic microwave intregated circuits (MMICs) are commercialised. Contrary to the high volume markets where low cost plastic packages are used, the semiconductor dies are assembled in hermetically sealed packages to give HiRel standard products for professional applications. It should be stressed, however, that also these HiRel components take full advantage of the mass production of wafers for the consumer and commercial markets. The wafers are selected from the best controlled volume production and have to pass special additional acceptance tests. For dedicated customers also naked dies are available from these specially approved and reserved wafers. Based on their proven reliability, the components described herein are best suited for use in high reliability projects, e.g. for space applications. The following sections on Silicon and on GaAs devices report our experience in HiRel parts and outline the range of components actually available in space quality (ESA/SCC qualified) from the Infineon Technologies Small Signal Semiconductors Group. Both wafer fabs and the HiRel assembly line are ISO9001 qualified. The Infineon Technologies Semiconductor Group received the QS9000 Certificate in 12-1997, and wafer production and HiRel assembly lines are approved ISO 9001. Numerous audits have been performed by high rel customers and organizations. The last audit by official authorities in this respect was performed by the German and European space agencies, DARA and ESA, respectively, in the frame of the BFY 193 / BFY 450 space evaluation programme in May, 1995. Infineon Technologies AG 3 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 2.2 SILICON DEVICES Infineon Technologies has a long history in manufacturing high reliability discrete semiconductor devices. Fundamental engineering work on a 1st generation of Si bipolar transistors was performed already in the sixties and early seventies. Based on extensive and numerous reliability investigations the ESA/SCC qualification status was granted to some Si component families, actually the PIN-diodes BXY 42, 43 and 44, and the Schottky diodes BAS 70 and BAS 40 are ESA/SCC space qualified in their different package variants. The microwave bipolar junction transistors (BJT) of our 3rd generation headed by the BFY193 passed the ambitious ESA evaluation and qualification programmes and received full ESA qualification (June 1996), this family is completed by the larger type variant BFY196 (ESA/SCC qulification running). Also, the new SIEGET microwave transistors, our 4th generation with its largest type variant, the BFY450, passed the ESA/SCC qualification programme recently (June 1997). Si microwave devices, diodes as well as bipolar transistors, have been used in numerous space projects. 2.3 GaAs DEVICES In compound semiconductor research Infineon Technologies has a background of more than 45 years. The activities range from material growth, technology development through devices to circuits including monolithic microwave integrated circuits (MMICs) and systems applications of new components. There are two main aspects driving these GaAs activities: The first is to have this "high technology" available inhouse for current and future enhanced systems. The second is to commercialise GaAs products as a supplement to the Si semiconductor programme. As a result, the company is engaged in the most important application fields including especially low noise HEMTs and power FET devices for microwave applications, discretes as well as MMICs, and has also ESA/SCC qualified GaAs devices in its delivery programme. In 1989 the GaAs Wafer Fab Line achieved a formal quality release to internal standards, followed later by certifications according CECC 20 000 / CECC 50 000 covering EN 29 001 (ISO 9001). The history of the GaAs wafer production line started in 1980 with the fabrication of discrete low noise and general purpose GaAs FETs for the open market. The world first commercially available GaAs MMICs were released in 1982. A very important milestone was the invention of the Infineon Technologies specific, proprietary self-aligned gate process called GaAs DIOM technology. The process exhibits exceptional device uniformity and reliability, it was released in 1984. First DIOM-MMICs (CGY40, CGY31) were marketed according MIL883 quality already in 1986. Development of GaAs power devices at the Semiconductor Group started in 1987 after taking over corresponding responsibilities from MSC, a former Infineon Technologies company. Already in 1992 the production of corresponding high reliability Phased Array Radar MMICs (LNA, VGA, MPA, HPA) started. The same technology is also used for large volume commercial power FETs in low cost plastic packages introduced in 1993. Using similar chips in hermetically sealed packages gives high rel devices for the professional market, proven through the ESA/SCC evaluation programme successfully completed in 1995. Regarding low noise devices an important milestone was the introduction of a self aligned HEMT process. GaAs LN-HEMT marketing started in 1989. A Space Evaluation and Qualification Programme to ESA / SCC specifications was completed on the HEMT types CFY66 and CFY67 under DARA and ESA contracts in 1994, with the Infineon Technologies HEMTs becoming the first ever space qualified HEMTs. First flight parts have been delivered to the Artemis project, and the naked dies are chosen as the base line for the LNA of the ASAR / Envisat project. The long and successfull history of DIOM Power FETs and MMICs at Infineon Technologies on commercial devices and project work shall be explained in more detail. The large volume production of P-FETs and PMMICs for mobile communication (DECT, GSM, PCN) is based on surface mountable devices in low cost plastic Infineon Technologies AG 4 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview packages and has brought Infineon Technologies to become the largest commercial supplier of GaAs devices in Europe. Most of the devices are power MESFETs or MMICs with large gate width structures, and the process maturity is best proved by these figures. Similar P-FET dies in hermetically sealed packages give a power line-up for professional applications up to 5GHz (CLY29, 32, 35, 38). Based on the mass production of the dies and the huge amount of available corresponding internal reliability data, an ESA/SCC Space Evaluation and Qualification Programme was started under DARA and ESA contracts leading to the ESA/SCC space qualification of the CLY32 as the pilot type in November, 1997, the qualification of the larger Power-FETs is running. First flight parts have been delivered to the Spot / Vegetation and Meteosat Second Generation projects. Power MMIC developments include activities for an S-band Radar project (high power amplifier HPA-MMICs), the C-band COBRA PAR system (among others driver or medium power amplifier MPA-MMICs and HPAMMICs), and work on X-band SAR systems (HPA-MMICs). The MPA-MMIC die developed and delivered for a C-band Phased Array Radar is also selected as the base line for the driver die of the ASAR / Envisat project, the corresponding VGA is under discussion for this challenging instrument. The results of an X-band HPA with Pout=5.6W and PAE=33% are exceptional and world-wide recognised. Some of the recent developments were embedded in the FRG Government "Drei-Funf Elektronik" consortial programme. In respect to power devices Infineon Technologies was also engaged in the ESPRIT programme "MANPOWER" and in the IEPG group. Regarding space applications Infineon Technologies was also engaged as subcontractor in the ESA programme "Evaluation of New Microwave Power Transistors" with PFETs. The project work at Infineon Technologies is used as an vehicle to create devices for the commercial and professional market. Developments of new X-Band Power-FETs under ESA contracts aim at the creation of so-called high power prematched FETs not only for space, but also for other professional applications. Infineon Technologies AG 5 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 3 QUALITY SPECIFICATIONS OF HIREL COMPONENTS 3.1 OVERVIEW ON AVAILABLE HIREL QUALITY LEVELS The quality philosophy of our production for the commercial market is treated in detail in the paragraph on general quality in our Small Signal Semiconductors data books. The quality assurance of our HiRel devices is relying heavily on this basic quality system. In addition special measures are taken to assure the higher quality levels of our HiRel products. First of all, wafers are selected from the normal production runs and are exposed to a specific release procedure. The semiconductor dies are then assembled in hermetically sealed microwave packages and tested. These components are available in four well defined upgrading quality levels, compare also Table 1 for a direct comparison of these levels: For the Professional Quality Level the components pass basic mechanical, thermal and electrical tests and inspections and are fully DC / RF tested. This quality level gives the same electrical performance as the other levels, correspondent devices may be used e.g. for engineering work. The High Rel Quality Level provides extended tests and additionally a 100% Burn-In (screening) The testing procedure secures full tracebility and is explicitely certified for each delivery lot by the corresponding "Certificate of Compliance" CoC. This level may be used in professional equipment. The Space Quality Level provides further extended tests, partly a Pre Burn-In, a multiple 100% Burn-In screening on serialized devices and a temperature characterisation. Final electrical measurements are given on a read and record base. The testing procedure is again explicitely certified for each delivery lot by a CoC. Lot Acceptance Tests to different levels will be performed, if ordered. This level will be used especially in commercial spacecraft systems. The ESA Space Quality Level follows the testing procedures specified in the ESA / SCC Generic Specification 5010 and in the corresponding Detail Specifications. They provide again further extended tests, partly a Pre Burn-In and multiple 100% Burn-In on serialized devices including an individual drift evaluation, a temperature characterisation and final electrical measurements. Full ESA specified data documentation is provided including all measurements on a read and record base. The testing procedure is again explicitely certified for each delivery lot by a CoC. Lot Acceptance Tests to different levels will be performed, if ordered. This level will be used especially in spacecraft systems supervised by ESA and corresponding agencies. Quality Level Burn-In Drift2 Temp. Charact. LAT Docum. - - - - - + + - - - CoC + + + multiple + + + CoC & Final Data + + + multiple + + + CoC & Full Doc. Wafer Release Mech. Insp. Read & Record Profi + - + High Rel High Rel + - Space Space + ESA + Profi ESA Notes: 100% 100% DC/RF1 Burn-In2 1: RF for naked dies partly on a sample base only. 2: Burn-In may not be possible for naked dies Table 1 HiRel Small Signal Semiconductors Quality Levels: Test Programmes Infineon Technologies AG 6 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 3.2 WAFER RELEASE The wafers are processed and inspected including quality inspections according to the Process Identification Document P.I.D.. Full documentation of all process steps and inspection is stored. Wafers meant for HiRel devices are then selected and exposed to a specific release procedure, including pilot run assembling and endurance testing. The generic wafer process and release flow for HiRel devices is given in Fig.1. Specific upgrades and limits are used for the different quality levels. 1 Wafer Process and Inspections according P.I.D. 1.1 Wafer Process and Inspections 1.2 Electrical Measurements 100 % 1.3 Dicing and Visual Inspection Diced Wafer 2 Review of Process Data 2.1 SPC Analysis 2.2 PCM Analysis 2.3 Review of 100 % Electrical Measurements 2.4 Review of Inspections Initial Wafer Release 3 Wafer Acceptance Test 3.1 SEM Inspection 3.2 Pilot Run Assembling and Tests Die Visual Inspection and Selection Die Attach Wire Bonding Internal Visual Inspection Bond Pull / Die Shear Test Encapsulation Thermal Shock Fine Leak and Gross Leak Seal Test External Visual Inspection 3.3 Pilot Run Electrical Characterisation Serialisation Electrical Measurements at Room Temperature Electrical Measurements at High and Low Temperatures 3.4 Endurance Test (Quality Level "High Rel" and higher) High Temperature Bias Endurance Test (min 1000 h at Tjmax or 168 h at Tjmax + 25 C) Electrical Measurements after Endurance Test Parameter Drift Evaluation Bond Pull / Die Shear Test 3.5 Check Periodic Reliability Monitor Final Wafer Release Fig.1 Generic Wafer Process and Release Flow for HiRel Small Signal Semiconductors Infineon Technologies AG 7 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 3.3 HiRel QUALITY LEVELS The flow charts for production, inspections and testing of the four standard HiRel quality levels are given in Fig.2-5. As can be seen, the quality levels provide successively higher degrees of testing, screening and documentation, thus providing the increased reliability assurance needed for the different applications. The sub-paragraphs use the same No. for quick reference. Full traceabilty of a delivery lot to an assembly lot and the specific semiconductor wafers used is secured for the High Rel Quality Level and the further upgrades. Diced Wafer Released for Professional Quality Level 1 Assembling 1.1 Die Selection 1.2 Die Mounting 1.3 Wire Bonding 1.4 Internal Visual Inspection 1.5 Bond Strength Test (Sample) 1.6 Die Shear Test (Sample) 1.7 Encapsulation 1.8 High Temperature Stabilisation Bake 1.9 External Visual Inspection 1.10 Review of Assembling Release for Final Production Tests 2 Final Production Tests 2.6 Fine Leak and Gross Leak Seal Test 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking External Visual Inspection 2.11 Review of Final Production Tests Delivery Fig.2 Assembling and Testing Flow of Professional Quality Level Infineon Technologies AG 8 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Diced Wafer Released for High Rel Quality Level 1 Assembling 1.1 Die Selection 1.2 Die Mounting 1.3 Wire Bonding 1.4 Internal Visual Inspection 1.5 Bond Strength Test (Sample) 1.6 Die Shear Test (Sample) 1.7 Encapsulation 1.8 High Temperature Stabilisation Bake 1.9 External Visual Inspection 1.10 Review of Assembling Release for Final Production Tests 2 Final Production Tests 2.2 Thermal Shock 2.5 Particle Impact Noise Detection Test PIND 2.6 Fine Leak and Gross Leak Seal Test 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking 2.11 Review of Final Production Tests Release for Burn-In 3 Burn-In and Electrical Measurements 3.1 High Temperature Reverse Bias or Power Burn-In 3.6 Full Electrical Measurements at Room Temperature 3.7 Fine Leak and Gross Leak Seal Test 3.8 External Visual Inspection 3.9 Review of Burn-In and Measurements / Check for Lot Acceptance 3.12 Certificate of Compliance Delivery Fig.3 Assembling and Testing Flow of High Rel Quality Level Infineon Technologies AG 9 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Diced Wafer Released for Space Quality Level 1 Assembling 1.1 Die Selection 1.2 Die Mounting 1.3 Wire Bonding 1.4 Internal Visual Inspection 1.5 Bond Strength Test (Sample) 1.6 Die Shear Test (Sample) 1.7 Encapsulation 1.8 High Temperature Stabilisation Bake 1.9 External Visual Inspection 1.10 Review of Assembling Release for Final Production Tests 2 Final Production Tests 2.2 Thermal Shock 2.3 Constant Acceleration (for large components only) 2.4 Vibration (for large components only) 2.5 Particle Impact Noise Detection Test PIND 2.6 Fine Leak and Gross Leak Seal Test 2.7 Electrical Measurements and Pre Burn-In (if specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking, Serialisation 2.11 Review of Final Production Tests Release for Burn-In 3 Burn-In and Electrical Measurements 3.1 High Temperature Reverse Bias 3.2 Power Burn-In 1 and Parameter Drift / PDA Evaluation 3.4 Electrical Measurements at High and Low Temperatures 3.5 Radiographic Inspection (if specified) 3.6 Full Electrical Measurements at Room Temperature 3.7 Fine Leak and Gross Leak Seal Test 3.8 External Visual Inspection 3.9 Review of Burn-In and Measurements / Check for Lot Acceptance 3.10 Perform Lot Acceptance Tests (if ordered) 3.11 Prepare Data Package (Final Electrical Measurements Results) 3.12 Certificate of Compliance Delivery Fig.4 Assembling and Testing Flow of Space Quality Level Infineon Technologies AG 10 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Diced Wafer Released for ESA Space Quality Level 1 Assembling 1.1 Die Selection 1.2 Die Mounting 1.3 Wire Bonding 1.4 Internal Visual Inspection / Customer Inspection 1.5 Bond Strength Test (Sample) 1.6 Die Shear Test (Sample) 1.7 Encapsulation 1.8 High Temperature Stabilisation Bake 1.9 External Visual Inspection 1.10 Review of Assembling Release for Final Production Tests 2 Final Production Tests 2.1 Electrical Measurements Go/Nogo 2.2 Thermal Shock 2.3 Constant Acceleration (for large components only) 2.4 Vibration (for large components only) 2.5 Particle Impact Noise Detection Test PIND 2.6 Fine Leak and Gross Leak Seal Test 2.7 Electrical Measurements and Pre Burn-In (if specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking, Serialisation 2.10 Dimension Check 2.11 Review of Final Production Tests Release for Burn-In 3 Burn-In and Electrical Measurements 3.1 High Temperature Reverse Bias and Parameter Drift / PDA Evaluation 3.2 Power Burn-In 1 and Parameter Drift / PDA Evaluation 3.3 Power Burn-In 2 and Parameter Drift / PDA Evaluation 3.4 Electrical Measurements at High and Low Temperatures 3.5 Radiographic Inspection (if specified) 3.6 Full Electrical Measurements at Room Temperature 3.7 Fine Leak and Gross Leak Seal Test 3.8 External Visual Inspection 3.9 Review of Burn-In and Measurements / Check for Lot Acceptance 3.10 Perform Lot Acceptance Tests (if ordered) 3.11 Prepare Full ESA Data Package 3.12 Certificate of Compliance Delivery Fig.5 Assembling and Testing Flow of ESA Space Quality Level Infineon Technologies AG 11 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 4 SELECTION GUIDES OF HiRel DISCRETE MICROWAVE SEMICONDUCTORS The Selection Guide provides main maximum ratings and electrical key parameters (typical data). 4.1 HiRel Silicon Diodes General Purpose Silicon Schottky Diodes (Tj,max = 150C) Maximum Ratings Component VR IF Characteristics (typical data) VBR Type - ESA/SCC VF RF CD Package Detail Spec. - (1mA) (10/15mA) (0V) Type Type Variant Variant V mA V V pF BAS40-T1 40 120 > 40 (@-10A) 0,330 9,0 3,0 70 70 > 70 (@-2A) 0,380 30 1,4 BAS70-T1 BAS70B-HP (bridge quad) No. T1 5512/020-03 T1 HPAC14 0 5512/020-01 5512/020-02 The BAS70 is ESA/SCC space qualified with all type variants, the space qualification exercise of the BAS40 is running (qualification expected 2000). Silicon PIN Diodes (Tj,max = 175C) Maximum Ratings Comp. VR Ptot Characteristics (typical data) VBR Type Variant ESA/SCC RF CT Package Detail Spec. - (10mA) (-50V) (If/r=+10/ -6mA) Type Type Variant No. V mW V pF ns BXY42-T1 BXY42-T 50 350 600 > 50 (@-10A) 1,0 0,22 (20V) 50 T1 T 5513/017-01 5513/017-02 BXY43-T BXY43-T1 BXY43-P1 BXY43-FP (single diode) BXY43P-FP (matched pair) 150 500 > 150 (@-0.1A) 0,9 0,30 0,30 0,50 0,60 650 T T1 P1 FP 5513/030-01 5513/030-02 5513/030-03 tbd. FP 5513/030-04 BXY44-T BXY44-T1 BXY44-T2 BXY44-FP (single diode) BXY44P-FP (matched pair) 200 T T1 T2 FP 5513/030-05 5513/030-06 5513/030-07 tbd. FP 5513/030-08 0,60 500 > 200 (@-0.1A) 3,0 3,0 3,0 3.8 0,20 0,20 0,20 0,50 3.8 0,50 800 The BXY42, BXY43 and BXY44 are ESA/SCC space qualified with most type variants. Infineon Technologies AG 12 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 4.2 HiRel SILICON BIPOLAR TRANSISTORS Conventional Silicon Bipolar Microwave Transistors (Tj,max = 200C) Maximum Ratings Comp. VCE0 IC Ptot Type Characteristics (typical data) ESA/SCC RthJS fT NF Gma/ms Pout Package Detail Spec. - max (500MHz, 5V) (2GHz, 5V) (2GHz, 5V) (2GHz, 5V) Type Type Variant No. V mA mW K/W GHz dB dB dBm BFY180 8 4 30 805 6,5 2,6 13,5 - Micro-X1 5611/006-01 BFY280 8 10 80 450 7,2 2,2 14,0 - Micro-X1 5611/006-02 BFY181 12 20 175 360 7,5 2,2 14,5 - Micro-X1 5611/006-03 BFY182 12 35 250 255 7,5 2,4 14,5 - Micro-X1 5611/006-04 BFY183 12 65 450 225 7,5 2,3 14,0 14,5 Micro-X1 5611/006-05 BFY193 12 80 580 165 7,5 2,3 13,5 17,5 Micro-X1 5611/006-06 BFY196 12 100 700 135 6,5 3,0 11,0 19,5 Micro-X1 5611/006-07 The BFY 193 family is ESA/SCC space qualified with all type variants except the BFY196, whose exercise is running (qualification expected 2000). SIEGET Silicon Bipolar Microwave Transistors (Tj,max = 175C) Maximum Ratings Comp. VCE0 IC Ptot Type Characteristics (typical data) ESA/SCC RthJS fT NF Gma/ms Pout max (2GHz, 3V) (1,8GHz, 2V) (1,8GHz, 2V) (1,8GHz, 2V) Package Detail Spec. Type Type Variant No. V mA mW K/W GHz dB dB dBm BFY405 4,5 12 55 545 22 1,15 23 5 Micro-X 5611/008-01 BFY420 4,5 35 160 285 22 1,10 21 12 Micro-X 5611/008-02 BFY450 4,5 100 450 145 22 1,25 16 19 Micro-X 5611/008-03 (@1GHz) (@3V) The BFY 450 family is ESA/SCC space qualified with all type variants. Infineon Technologies AG 13 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 4.3 HiRel GaAs MICROWAVE DEVICES Low Noise / General Purpose GaAs Microwave C/Ku-Band MESFETs (Tj,max = 175C) Maximum Ratings Component VDS VDG ID Characteristics (typical data) Ptot Type - ESA/SCC RthJS NF Ga P1dB Package Detail Spec. - max (12 GHz) (12 GHz) (12 GHz) Type Type Variant Variant V V mA mW K/W GHz dB dBm CFY25-23 5 7 80 250 410 2,3 8,7 - CFY25-20 2,0 9,0 - 5613/008-02 CFY25-P - - 15 5613/008-01 CFY25-23P 2,3 8,7 15 5613/008-05 CFY25-20P 2,0 9,0 15 5613/008-03 3.5 8.0 - - - 26 CFY27-38 9 11 420 900 150 CFY27-P No. Micro-X Micro-X 5613/008-04 5613/008-06 (tbc.) 5613/008-07 (tbc.) The CFY25 space qualification exercise is running (qualification expected 2000),. Detail Spec. No. tbc. The CFY27 is a component under development, performance to be confirmed. Super Low Noise GaAs Microwave X/K-Band HEMTs (Tj,max = 150C) Maximum Ratings Component VDS VDG ID Characteristics (typical data) Ptot Type Variant ESA/SCC RthJS NF Ga Pout Package Detail Spec. - max (12 GHz) (12 GHz) (12 GHz) Type Type Variant V V mA mW K/W GHz dB dBm 3,5 4,5 60 200 515 0,9 11,0 - CFY67-10P 0,9 11,0 11,0 5613/004-04 CFY67-08 0,7 11,5 - 5613/004-01 CFY67-08P 0,7 11,5 11,0 5613/004-03 CFY67-06 0,5 12,5 - 5613/004-05 (tbc.) CFY67-10 No. Micro-X 5613/004-02 The CFY67 are ESA/SCC space qualified with most type variants. Infineon Technologies AG 14 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Power GaAs Microwave C-Band MESFETs (Tj,max = 175C) Maximum Ratings Component VDS VDG ID Characteristics (typical data) Ptot Type - ESA/SCC RthJS Glp Pout / P-1dB PAE Package Detail Spec. - (max) (2,3 GHz) (2,3 GHz) (2,3 GHz) Type Type Variant Variant V V mA W K/W dB dBm % No. (tbc.) CLY29 - 00 CLY29 - 05 CLY29 - 10 14 16 700 3,55 32 (38) 15 15,2 15,2 28,8 29,3 30 50 52 55 MWP-25 5614/006-06 5614/006-05 5614/006-04 CLY32 - 00 CLY32 - 05 CLY32 - 10 14 16 1400 6.75 16 (20) 12 12,5 12,5 31,8 32,3 33 47 50 53 MWP-25 5614/006-03 5614/006-02 5614/006-01 CLY35 - 00 CLY35 - 05 CLY35 - 10 14 16 2800 18 6,8 (7,5) 11,0 11,2 11,2 34,8 35,3 35,8 47 50 53 MWP-35 5614/008-06 5614/008-05 5614/008-04 CLY38 - 00 CLY38 - 05 CLY38 - 10 14 16 5600 30 3,8 (4,5) 11,0 11,2 11,2 37,8 38,3 38,8 47 50 53 MWP-35 5614/008-03 5614/008-02 5614/008-01 The CLY32 is ESA/SCC space qualified as the pilot type, the CLY29, CLY35 and CLY38 qualification exercise is running (qualification expected 2000). Power GaAs Microwave X-Band MESFETs (Tj,max = 175C) Maximum Ratings Component VDS VDG ID Characteristics (typical data) Ptot Type - ESA/SCC RthJS Glp Pout / P-1dB PAE Package Detail Spec. - (max) (2,3 GHz) (2,3 GHz) (2,3 GHz) Type Type Variant Variant V V mA W K/W dB dBm % CLX27 - 00 CLX27 - 05 CLX27 - 10 11 13 420 3.38 35 (40) 18,5 19 19 26,5 27,3 27,8 50 53 55 MWP-25 5614/007-06 5614/007-05 5614/007-04 CLX30 - 00 CLX30 - 05 CLX30 - 10 11 13 840 5.4 20 (25) 17,5 18 18 29,5 30,3 30,8 48 52 54 MWP-25 5614/007-03 5614/007-02 5614/007-01 CLX32 - 00 CLX32 - 05 CLX32 - 10 11 13 1400 5.4 20 (25) 16 16,5 16,5 31,5 32,3 32,8 48 52 54 MWP-25 (tbc.) CLX34 - 00 CLX34 - 05 CLX34 - 10 11 13 2100 6.75 16 (20) 14,5 15 15 33,2 34 34,5 47 51 53 MWP-25 (tbc.) Infineon Technologies AG 15 of 22 No. (tbc.) December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview The CLX27 and CLX30 space qualification exercises are running (qualification expected 2000). The CLX32 and CLX34 are components under development, performance to be confirmed. Infineon Technologies AG 16 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview General Purpose MMIC in MESFET Technologie (Tj,max = 175C) Maximum Ratings Component VD VG ID Ptot Type - Characteristics (typical data) ESA/SCC RthChS G P-1dB IP3 Package Detail Spec. - (max) (1.8 GHz) (0.2 - 1.8 GHz) (0.8 GHz) Type Type Variant Variant V V mA mW K/W dB dBm DBm CGY41 5.5 -4...0 60 440 155 9.5 18 32 No. (tbc.) Micro-X tbc There is actually no space qualification planned for the CGY41 but Infineon is open to discuss a qualification. Infineon Technologies AG 17 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 5 PACKAGE OUTLINES 5.1 PACKAGE OUTLINES OF DIODE PACKAGES 5.1.1 FP PACKAGE Overview Symbol B B1 D D1 d d1 F L Millimetre min max 3,10 3,55 3,00 3,30 1,30 1,70 0,55 0,65 0,10 0,15 0,25 0,40 2,40 2,60 5,50 - Y1 B B1 L L X1 d D Side View D1 Y2 2 1.1 1.1' d1 F Top View 1.2' 1.2 5.1.2 HPAC140 PACKAGE Overview Symbol A B C D E F Millimetre min max 3,3 3,7 1,9 2,1 0,4 0,7 5,5 1,75 0,07 0,15 Cathode D 4 F D 1 Top View/ Side View 3 B 2 z A z E C x Infineon Technologies AG y 18 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 5.1.3 P1 PACKAGE Overview X1 Cathode Symbol A B C D Millimetre min max 2,0 2,2 3,0 3,2 1,45 1,7 0,4 0,6 Y1 Y2 Side View/ Top View 2 1 D A C B 5.1.4 T PACKAGE Overview Symbol A B C Millimetre min max 1,30 1,45 1,15 1,35 0,40 B X1 A C Y1 Y2 Side View/ Top View 2 1 Infineon Technologies AG 19 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 5.1.5 T1 PACKAGE Overview Symbol A B C D E F G H Millimetre min max 1,30 1,45 1,15 1,35 0,40 0,10 0,50 0,30 0,06 0,10 5,50 0,40 0,60 X1 B Y1 A Y2 C Side View / Front View 2 1 D F E G G H 5.1.6 T2 PACKAGE Overview X1 Y2 Y1 B Symbol A B C D Millimetre min max 1,30 1,45 2,0 2,2 0,60 1,25 0,08 0,20 A 2 1 Side View/ Top View D C Infineon Technologies AG 20 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 5.2 PACKAGE OUTLINES OF TRANSISTOR PACKAGES 5.2.1 MICRO-X PACKAGE, MICRO-X1 PACKAGE 4 3 1 2 Overview Top View Side View 5.2.2 MWP-25 PACKAGE Overview Top View Side View Infineon Technologies AG 21 of 22 December 1999 HiRel Discrete & Microwave Semiconductors Introduction and Type Overview 5.2.3 MWP-35 PACKAGE Overview Top View Side View Infineon Technologies AG 22 of 22 December 1999